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Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors [2026-07-20] |
| Asir Intisar Khan et al.,Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.Science389,508-511(2025).DOI:10.1126/science.adx6955 Negative_capacitance_overcomes_Schottky-gate_limits_in_GaN_high-electron-mobility_transistors.pdf |
