中国电子科技集团公司第55研究所的吴云高级工程师将于10月13日来我所交流并作学术报告，报告信息如下：

报告题目：

200GHz Maximum Oscillation Frequency in CVD Radio Frequency Graphene Transistors

200GHz震荡频率的CVD石墨烯射频晶体管

报告人：吴云博士，中国电子科技集团公司55研究所

报告时间：2016年10月13日9:00-10:00

报告地点：图书馆101会议室

Abstract: Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cut off frequency (f_T) of 427 GHz, the maximum oscillation frequency (f_max) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices. This method maintains ideally compatible with wet-etching self-aligned process and T-type gate, by which the parasitical effect could be restrained. As a result，a small parasitic resistance of 105 Ωμm is achieved and a clear saturation current of the devices is observed. Particularly, f_max of 106 GHz and 200 GHz before and after de-embedding respectively outperforms any GFET reported to data. We wish the approach we proposed here will pave the way to graphene based RF&OE devices.

摘要：作为最有希望实现太赫兹工作频率的竞争者之一，石墨烯器件震荡频率(f_max)相对于本征电流增益截止频率（f_T）427GHz依然很低，严重制约了它在高频电子领域的应用。我们开发了一种新颖的CVD石墨烯转移方法，避免了转移以及器件制备过程中石墨烯受到有机光刻胶的污染。该方法和湿法腐蚀自对准、T型栅工艺保持完美兼容，有效抑制了器件的寄生效应，器件寄生电阻降低到105 Ωμm，并观察到明显的电流饱和现象，去嵌前后分别为106GHz和200GHz的震荡频率远超已报道水平。我们希望本工作能为石墨烯射频光电子电子的应用奠定基础。

报告人简介：

吴云博士，中国电子科技集团公司第55研究所高级工程师。2012年于武汉大学获得博士学位。同年进入55所重点实验室工作，现为高级工程师，主要从事新型微波器件与集成技术研究。

请感兴趣的老师和同学准时参加！