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为促进国际学术交流和合作，本期半导体沙龙邀请来自英国卡迪夫大学的李强教授围绕光子集成基于硅基III-V外延技术专题做学术报告，交流探讨该领域最新研究成果和未来发展趋势，诚邀各位老师与同学的参与！

本期主题-题目：III-V epitaxy on silicon for photonic integration

报告人：Qiang Li

邀请人：杨华

主持人：杨华 伊晓燕 吴江滨 蒋琦

记录员/联系人：贾政恺

时  间：2024年11月26日 14：30

地  点：中国科学院半导体研究3号楼320

摘  要：The lack of an efficient light emitter due to the indirect bandgap properties of silicon remains one of the bottlenecks hindering the development of silicon photonics platform. Integrating III-V light sources onto silicon based photonic integrated circuits is critical to enable next-generation optical interconnects and empower the AI evolution. Despite many successes in the state-of-the-art hybrid lasers enabled by bonding and transfer printing technologies, III-V/Si heteroepitaxy offers scalability up to 300mm silicon substrates and benefits from the collective integration process. In the past, progress by direct epitaxy has been impeded by fundamental challenges from materials mismatch and the differences in crystal polarities. Significant progress has been made recently by employing defect-tolerant III-V nanostructures as active gain materials and developing advanced nano-epitaxy and lateral epitaxy techniques. In this talk, I will discuss these novel approaches to tackle the challenges in III-V/Si heteroepitaxy and present our latest research to enable III-V growth on the silicon-on-insulator platforms using metal-organic chemical vapor deposition (MOCVD) for photonic integration.

报告人简介：Qiang Li(李强) is a Reader (Associate Professor) at the school of Physics and Astronomy, Cardiff University. He received his B.Sc. degree in microelectronics from Peking University and his Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology (HKUST) in 2014. He then worked as a Research Assistant Professor at the HKUST before he joined Cardiff University in 2018 to lead a new research activity on metalorganic chemical vapor deposition (MOCVD). He has a strong track record in the MOCVD heteroepitaxy for electronic-photonic integration within a silicon platform and supported several international collaboration programs with UCSB, Harvard and University of Wisconsin. He was a recipient of the New Investigator Award from the Engineering and Physical Sciences Research Council (EPSRC) of the UK and the Royal Society International collaboration award. He has been a principle-investigator of over £2M research grants from EPSRC, innovateUK, Royal Society and other industry funders. He is also a co-investigator on multiple large-scale cross-institutional projects including the EPSRC Compound Semiconductor Manufacturing Hub and the UK Research and Innovation (UKRI)’s flagship Strength in Place Fund “CSconnected”.