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征稿：《半导体学报》“半导体光电子集成技术”专刊

半导体学报 yj 2020-02-20阅读量：

新一代信息技术正处于高速发展期，在宽带网络、大数据与人工智能等新型业务及应用的驱动下，数据流量以每年提升60%的速度爆发式增长，而光电子器件的带宽容量每年仅增长10%左右。因此，数据流量的大幅增长对光电子器件在带宽、容量、成本及功耗等方面均提出了严峻挑战，全谱段、高速率、大容量和智能化的光通信网络迫切需要更高性能的集成化光电子器件。同时，目前的光子器件总体处于“单个晶体管”时代，迫切需要进行一场系统性变革，迎来集成化时代。而要使光子技术能够担负起和微电子技术类似的重任，必须依赖与集成电路类似的半导体光电子集成技术。


本专刊针对半导体光电子集成技术的发展历史与现状、瓶颈与挑战、机遇与趋势，拟邀请相关领域的专家撰写综述论文、最新研究进展以及技术评论文章等。欢迎业内专家学者踊跃投稿！





专刊主题



专刊主题包括（但不限于）：

 ▲ 半导体光电子集成基础理论与模拟仿真技术

 ▲ 半导体光电子集成材料生长与加工工艺技术

 ▲ 半导体光电子集成先进封装与测试技术

 ▲ 高性能III-V族半导体光电子集成器件（激光器、调制器与探测器等）

 ▲ III-V族半导体光电子单片集成技术

 ▲ 光电子混合集成技术（III-V 族材料、硅、氮化硅、玻璃材料等）

 ▲ 基于新材料的光电子混合集成技术（铌酸锂薄膜材料、二维材料、超材料等）

 ▲ 其他交叉研究方向与新兴应用技术(微波光子集成、生物光子集成等)




特邀主编：王圩 院士



王圩，中国科学院半导体研究所研究员，中国科学院院士，半导体光电子学专家，1960年毕业于北京大学物理系半导体物理专业。早期从事无位错硅单晶和Ⅲ-Ⅴ族化合物异质结液相外延研究，为我国砷化镓基激光器从液氮温度提高到室温工作做出了贡献。1979年开始从事长波长InGaAsP四元双异质结半导体激光器和动态单频激光器研究。


代表性成果包括应变层多量子阱分布反馈激光器、半导体激光器与电吸收调制单片集成、半导体可调谐激光器等。近十年来率领课题组开展了半导体激光器阵列、微波光子集成芯片、多波长锁模激光器集成芯片等规模化光子集成技术的研究。建立了InP基光子集成技术平台，培养了大批从事光电子芯片研发的人才，为我国光纤通信用半导体光电子器件及其集成的发展做出了贡献。





客座编辑




赵玲娟研究员，中国科学院半导体研究所，邮箱：ljzhao@semi.ac.cn

姚建平院士，渥太华大学,邮箱：jpyao@uottawa.ca

黄卫平教授，山东大学，邮箱：wphuang_canada@hotmail.com

刘永教授，电子科技大学，邮箱：yongliu@uestc.edu.cn

Brent Little研究员，西安奇芯光电科技有限公司，邮箱：brent.little@qxptech.com




稿件要求



稿件格式请参照《半导体学报》论文模版，http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm




投稿方式



1. 在线提交：

https://mc03.manuscriptcentral.com/jos-iop

2. 提交于客座编辑邮箱。




关键时间表日期



投稿截止日期：2020年10月1日
出版日期：2021年2月1日



Call for Papers (Special Issue)

Semiconductor Optoelectronic Integrated Circuits



Driven by new emerging services and applications such as broadband networks, big data integration and artificial intelligence, the new generation of information technology is developing very fast in the past few years. The data flow shows an explosive growth rate of 60% per year, while the bandwidth capacity of optoelectronic devices only increases by about 10% per year. Therefore, the rapid growth of data flow has posed severe challenges to the performance of semiconductor optoelectronic devices in terms of bandwidth, capacity, cost, and power consumption. Full-spectrum, high-speed, large capacity and intelligent optical communication networks urgently demand higher performance integrated optoelectronic devices. At the same time, the development of current photonic devices is generally considered in the era of "single transistor" and on the eve of technology reform. In the future, if the optoelectronic technology would be able to play a key role in the new generation of information technology like the microelectronics technology, it must rely on the semiconductor optoelectronic integration circuits technology.


This special issue will invite distinguished researchers in the field of semiconductor optoelectronic integration to contribute review papers, latest research progress articles, views and perspective articles to cover the research history and current situation, bottleneck and challenge, opportunity and trend of optoelectronic integrations. The special issue will provide a reference to the field of semiconductor optoelectronic integrated circuits. Welcome worldwide distinguished experts to make contributions to this special issue!




Topics



Topics of the special issue (but not limited to):

▲Fundamental theoretical model and numerical simulation technology

▲Optoelectronics materials growth and fabrication processing technology

▲Advanced optoelectronic packaging and testing technology

▲High-performance III-V semiconductor optoelectronic unit devices (lasers, modulators, and detectors, etc.)

▲Monolithic III-V semiconductor optoelectronic integration technology (laser array, photonic transceiver, etc.)

▲Hybrid optoelectronic integration technology (III-V materials, silicon, silicon nitride, glass materials, etc.)

▲Hybrid optoelectronic integration technology based on new emerging materials (LNOI materials, two-dimensional materials, metamaterials, etc.)

▲Other emerging cross research directions and applications (integrated microwave photonics integration, biphotonic integration, etc.)




Guest Editor-in-Chief:

Prof. Wei Wang



Prof. Wei Wang, a professor in the Institute of semiconductor, Chinese Academy of Sciences. He is an academician of the Chinese Academy of Sciences and a semiconductor optoelectronics research expert. He graduated from the department of physics, Peking University in 1960. In the early stage, he has been engaged in the research of dislocation free silicon single crystal and Ⅲ-Ⅴ heterojunction liquid phase epitaxy, which has contributed to the room-temperature operation of GaAs based laser in China. Since 1979, he has been engaged in the research of long-wavelength double heterojunction laser and dynamic single-frequency laser.


His major research includes the strained layer multiple quantum well distributed feedback laser, the integration of semiconductor laser and electroabsorption modulation chip, tunable semiconductor laser, etc. In the past ten years, he has led his research group to carry out the research of large-scale photonic integration technology, such as semiconductor laser array, microwave photonics integrated chip, integrated multi-wavelength mode-locked laser, etc. In the meantime, he has established an InP based photonic integration technology platform, trained many experts in the research and development of optoelectronic integrated circuit, and has made great contributions to the development of semiconductor optoelectronic devices for optical communication in China.




Guest Editors



Prof. Lingjuan Zhao, Institute of semiconductors, CAS, Email: ljzhao@semi.ac.cn

Prof. Jianping Yao, University of Ottawa, Email: jpyao@uottawa.ca

Prof. Weiping Huang, Shandong University, Email: wphuang_canada@hotmail.com

Prof. Yong Liu, University of Electronic Science and technology, Email: yongliu@uestc.edu.cn

Prof. Brent Little, QXP technologies Inc., Email: brent.little@qxptech.com




Manuscript Submission



1. Online submission: https://mc03.manuscriptcentral.com/jos-iop.

2. Submit the manuscript to the guest editors via email.




Key timetable dates



Deadline for submission: October 1, 2020

Publication date: February 1, 2021







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