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半导体学报2021年第3期目次

半导体学报 JOS 2021-03-19阅读量:




J. Semicond. Volume 42, Number 3, March 2021

RESEARCH HIGHLIGHTS

Renaissance of tin halide perovskite solar cells

Shurong Wang, Aili Wang, Feng Hao, Liming Ding

J. Semicond. 2021, 42(3): 030201

doi: 10.1088/1674-4926/42/3/030201

White light-emitting diodes from perovskites

Hengyang Xiang, Chuantian Zuo, Haibo Zeng, Liming Ding

J. Semicond. 2021, 42(3): 030202

doi: 10.1088/1674-4926/42/3/030202

Self-assembled monolayers enhance the performance of oxide thin-film transistors

Wensi Cai, Zhigang Zang, Liming Ding

J. Semicond. 2021, 42(3): 030203

doi: 10.1088/1674-4926/42/3/030203

SHORT COMMUNICATION

Adjusting energy level alignment between HTL and CsPbI2Br to improve solar cell efficiency

Zihan Zhang, Jia Li, Zhimin Fang, Haipeng Xie, Yongbo Yuan, Chuantian Zuo, Liming Ding, Bin Yang

J. Semicond. 2021, 42(3): 030501

doi: 10.1088/1674-4926/42/3/030501

Blade-coated organic solar cells from non-halogenated solvent offer 17% efficiency

Wei Guan, Dong Yuan, Juntao Wu, Xiaobo Zhou, Hong Zhao, Fei Guo, Lianjie Zhang, Ke Zhou, Wei Ma, Wanzhu Cai, Junwu Chen, Liming Ding, Lintao Hou

J. Semicond. 2021, 42(3): 030502

doi: 10.1088/1674-4926/42/3/030502

REVIEWS

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Ying Zhu, Yongli He, Shanshan Jiang, Li Zhu, Chunsheng Chen, Qing Wan

J. Semicond. 2021, 42(3): 031101

doi: 10.1088/1674-4926/42/3/031101

Low-dimensional materials for photovoltaic application

Rokas Kondrotas, Chao Chen, XinXing Liu, Bo Yang, Jiang Tang

J. Semicond. 2021, 42(3): 031701

doi: 10.1088/1674-4926/42/3/031701

ARTICLES

Van der Waals heterojunction ReSe2/WSe2 polarization-resolved photodetector

Xiaoyu Tian, Yushen Liu

J. Semicond. 2021, 42(3): 032001

doi: 10.1088/1674-4926/42/3/032001

Anomalies in Young's modulus behavior after annealing in polycrystalline SmS

V. V. Kaminskii, N. V. Sharenkova, G. A. Kamenskaya, M. A. Grevtsev, Yu. V. Lyubimova

J. Semicond. 2021, 42(3): 032101

doi: 10.1088/1674-4926/42/3/032101

A 1.2 V, 3.1% 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process

Liqiong Yang, Linfeng Wang, Junhua Xiao, Longbing Zhang, Jian Wang

J. Semicond. 2021, 42(3): 032401

doi: 10.1088/1674-4926/42/3/032401

Side-channel attack-resistant AES S-box with hidden subfield inversion and glitch-free masking

Xiangyu Li, Pengyuan Jiao, Chaoqun Yang

J. Semicond. 2021, 42(3): 032402

doi: 10.1088/1674-4926/42/3/032402

Resonant enhancement of magnetic damping driven by coherent acoustic phonons in thin Co2FeAl film epitaxied on GaAs

Lin Song, Wei Yan, Hailong Wang, Jianhua Zhao, Xinhui Zhang

J. Semicond. 2021, 42(3): 032501

doi: 10.1088/1674-4926/42/3/032501

Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Yingjie Zhao, Shan Li, Huixue Ren, Shaojie Li, Peide Han

J. Semicond. 2021, 42(3): 032701

doi: 10.1088/1674-4926/42/3/032701