魏同波，男，博士，研究员，博士生导师。2007年7月在中科院半导体研究所获工学博士学位，在半导体所照明研发中心工作至今，期间于2015-2016年在美国康奈尔大学电子工程系访学，第三批青促会会员。主要从事宽禁带氮化物单晶生长、AlGaN和InGaN材料外延生长与结构设计以及相关光电器件研究，先后主持和参加国家重点研发计划、自然基金、863项目和院属项目等十余项。近年来，系统开展了GaN单晶衬底生长、纳米结构LED和日盲探测器、深紫外LED以及二维范德华外延氮化物等相关研究，取得的研究成果先后14次被半导体领域著名杂志Compound Semiconductor和Semiconductor Today作为Highlight报道，2次被Appl. Phys. Lett.选为Featured article。已在国内外杂志发表论文130余篇，其中作为第一作者或通讯作者在Adv. Mater.、J. Am. Chem. Soc.、Appl. Phys. Lett.、Otp. Lett.等杂志发表SCI论文70余篇，共申请专利40多项，引用1200多次。
主要研究领域或方向：
1. 新型微纳光电子器件
2. 深紫外发光和探测
3. 氮化物晶体材料
联系方式:
Email：tbwei@semi.ac.cn； Tel: 010-82305430
在研/完成项目:
1. 国家重点研发计划“战略性先进电子材料”专项，第三代半导体新型照明材料与器件研究（2018YFB0406700），2018-2021，在研，主持，项目首席
2. 国家自然基金面上项目：石墨烯上准范德华外延AlN及辅助剥离垂直结构深紫外LED研究（61974139），2020-2023，在研，主持
3. 北京市自然科学基金面上项目，二维石墨烯柔性转移氮化物LED的生长与机制研究（4182063），2018-2020，在研，主持
4. 国家自然基金面上项目：GaN基纳米柱LED选区外延及相关光电基础科学问题研究（61474109），2015-2018，结题，主持
5. 863重大项目子课题：大尺寸氮化镓衬底制备与同质外延技术研究（2014AA032605），2014-2016，结题，主持
6. 国家自然基金面上项目：半极性准同质外延绿光LED及量子效率提升技术研究（61274040），2013-2016，结题，主持
7. 863重大项目子课题：GaN同质衬底及外延技术研究（2011AA03A103），2011-2013，结题，主持
8. 国家自然基金青年基金：M面蓝宝石非极性与半极性GaN衬底生长及相关材料问题研究（60806001），2009-2011，结题，主持
代表性论文：
1. Haina Ci, Hongliang Chang, Ruoyu Wang, Tongbo Wei*(通讯作者), Yunyu Wang, Zhaolong Chen, et al., Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer, Adv. Mater. 31, 1901624 (2019)
2. Zhaolong Chen, Zhiqiang Liu, Tongbo Wei*(通讯作者), Shenyuan Yang, Zhipeng Dou, Yunyu Wang, et al., Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene, Adv. Mater. 31, 1807345 (2019)
3. Hongliang Chang, Zhaolong Chen, Weijiang Li, Jianchang Yan, Ruihou, Shenyuan Yang*, Zhiqiang Liu, Guodong Yuan, Junxi Wang, Jinmin Li, Peng Gao*, Tongbo Wei*(通讯作者), Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate, Appl. Phys. Lett. 114, 091107 (2019)
4. Ruilin Meng, Xiaoli Ji, Zheng Lou, Jiankun Yang, Yonghui Zhang, Zihui Zhang, Wengang Bi, Junxi Wang, Tongbo Wei*(通讯作者), High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer, Opt. Lett. 44, 2197 (2019)
5. Zhaolong Chen, Xiang Zhang, Zhipeng Dou, Tongbo Wei*(通讯作者), Zhiqiang Liu, Yue Qi, et al., High-brightness blue light-emitting diodes enabled by a directly grown graphene buffer layer, Adv. Mater. 30, 1801608 (2018)
6. Yue Qi, Yunyu Wang, Zhenqian Pang, Zhipeng Dou, Tongbo Wei*(通讯作者), Peng Gao*, et al., Fast Growth of Strain-free AlN on Graphene-buffered Sapphire, J. Am. Chem. Soc. 140 11935 (2018)
7. Zhuo Xiong，Tongbo Wei*(通讯作者), Yonghui Zhang，Xiang Zhang, Chao Yang, Zhiqiang Liu, et al., Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography, Nanotechnology 28, 114003 (2017)
8. Tongbo Wei*(通讯作者), Jiankun Yang, Yang Wei*, Ziqiang Huo, Xiaoli Ji, Yun Zhang, et al., Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy, Scientific Reports 6, 28620 (2016)
9. Zhuo Xiong, Tongbo Wei*(通讯作者), Yonghui Zhang, Junxi Wang, Jinmin Li, Multiple –exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes, Optics Express 24, A44 (2016)
10. Liang Shan, Tongbo Wei*(通讯作者), Yuanping Sun, Yonghui Zhang, Zhuo Xiong, et al., Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes, Optics Express 23, A957 (2015)
11. Tongbo Wei*(通讯作者), Xiaoli Ji, Kui Wu, Haiyang Zheng, Chengxiao Du, Qingfeng Yan, et al., Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes, Opt. Lett. 39, 379 (2014)
12. Tongbo Wei*(通讯作者), Ziqiang Huo, Yonghui Zhang, Haiyang Zheng, Yu Chen, Jiankun Yang, et al., Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals, Opt. Express 22, A1093 (2014)
13. Yonghui Zhang, Tongbo Wei*(通讯作者), Zhuo Xiong, Liang, Shang, Yingdong Tian, et al., Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, Appl. Phys. Lett. 105, 013108 (2014)
14. Xiaoli Ji, Tongbo Wei*(通讯作者), Fuhua Yang, Hongxi Lu, Xuecheng Wei, Ping Ma, et al., Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes, Opt. Express 22, A1001 (2014)
15. Kui Wu, Tongbo Wei*(通讯作者), Ding Lan, Xuecheng Wei, Haiyang Zheng, Yu Chen, et al., Phosphor-free nanopyramid white light-emitting diodes grown on (10-11) planes using nanospherical-lens photolithography, Appl. Phys. Lett. 103, 241107 (2013)
16. Chengxiao Du, Tongbo Wei*(通讯作者), Haiyang Zheng, Liancheng Wang, Chong Geng, Qingfeng Yan, et al., Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced lightextraction of light-emitting diodes, Opt. Express 21, 25373 (2013)
17.Tongbo Wei*(通讯作者), Kui Wu, Ding Lan, Qingfeng Yan, Yu Chen, Chengxiao Du, et al., Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, Appl. Phys. Lett. 101, 211111 (2012)
18. Tongbo Wei*(通讯作者), Kui Wu, Yu Chen, Jie Yu, Qingfeng Yan, Yiyun Zhang, et al., Improving light output of vertical-stand-type InGaN light emitting diodes grown on free-standing GaN substrate with self-assembled conical arrays, IEEE Electron Device Letter 33, 857 (2012)
19.Tongbo Wei*(通讯作者), Qingfeng Kong, Junxi Wang, Jing Li, Yiping Zeng, Guohong Wang, et al., Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands, Opt. Express 19, 1065 (2011)
20.Zhiqiang Liu, Tongbo Wei*(通讯作者), Enqing Guo, Xiaoyan Yi, Liancheng Wang, Junxi Wang, et al., Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown free-standing GaN substrate, Appl. Phys. Lett. 99, 091104 (2011)