邓惠雄，博士，研究员，国科大岗位教授，博士生导师。
获得国家杰出青年科学基金（2024）、优秀青年科学基金（2019）资助，入选中国科学院青促会优秀会员（2021）。
2010年毕业于中国科学院半导体研究所，获理学博士学位，导师：李树深院士；2011-2014年，在美国再生能源国家实验室 (NREL) 从事博士后研究，合作导师：魏苏淮教授。长期从事半导体物理、半导体缺陷物理、半导体材料与器件的物性探究与设计等领域的研究工作，取得了一系列创新性成果，迄今发表了包括Science、Nature Energy、Nature Comm.、Phys. Rev. Lett.、Adv. Mater.、Phys. Rev. B、Appl. Phys. Lett.等在内的SCI论文90多篇，获软件著作权2项，申请专利4项。
当前主要研究兴趣：半导体物理、半导体掺杂和缺陷物理及半导体光电材料物性设计与模拟
现招收硕博连读生、博士生；长期招收博士后
联系方式：
中国科学院半导体研究所半导体超晶格国家重点实验室（邮政编码：100083）
E-mail: hxdeng@semi.ac.cn；
电话：(010) 82304054
在研/完成主要项目：
1. 国家自然科学基金委优秀青年科学基金（2020-2022 主持）
2. 中国科学院青年创新促进会优秀会员（2021-2024 主持）
3. 国家自然科学基金面上项目：“温度引起的半导体能带结构和输运性质的重整化：电-声子相互作用效应”（2019-2022 主持）
4. 国家自然科学基金面上项目：“先进半导体热电材料微观机理的第一性原理研究及性能优化和设计”（2015-2018 主持）
5. 中国科学院青年创新促进会会员（2017-2020 主持）
6. 国家自然科学基金重点项目：“透明导电体的物理机理研究与新材料设计”（2017-2021 子课题负责人）
7. 国家自然科学基金青年基金：“透明导电氧化物纳米结构的掺杂、形状及尺寸效应的第一性原理研究”（2012-2014 主持）
8. 中国科学院稳定支持基础研究领域青年团队（2021）
9. 国家重点研发计划：“万小时工作寿命的钙钛矿太阳电池关键技术”（2020-2024 骨干）
10. 国家重大科技专项：“环境友好型高稳定性太阳能电池的材料设计与器件研究”（2016-2020 骨干）
部分研究论文：
1. X. B. Chu, Q. F. Ye, Z. H. Wang, C. Zhang, F. Ma, Z. H. Qu, Y. Zhao, Z. G. Yin, Hui-Xiong Deng, X. W. Zhang, J. B. You. Surface in situ reconstruction of inorganic perovskite films enabling long carrier lifetimes and solar cells with 21% efficiency. Nature Energy, 8(4): 372-380 (2023).
2. Z. Q. Zhou, T. Shen, P. Wang, Q. L. Guo, Q. H. Wang, C. J. Ma, K. Y. Xin, K. Zhao, Y. L. Yu, B. Qin, Y. Y. Liu, J. H. Yang, H. Hong, K. H. Liu, C. Liu, Hui-Xiong Deng, Z. M. Wei. Low symmetric sub-wavelength array enhanced lensless polarization- sensitivity photodetector of germanium selenium. Science Bulletin, 68(2): 173-179 (2023).
3. X. L. Wang, Z. X. Shang, C. Zhang, J. Q. Kang, T. Liu, X. Y. Wang, S. L. Chen, H. L. Liu, W. Tang, Y. J. Zeng, J. F. Guo, Z. H. Cheng, L. Liu, D. Pan, S. C. Tong, B. Wu, Y. Y. Xie, G. C. Wang, J. X. Deng, T. R. Zhai, Hui-Xiong Deng, J. W. Hong, J. H. Zhao. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrPS. Nature Communications, 14(1): 840-840 (2023).
4. C. Qiu, Y. Song, Hui-Xiong Deng, S. H. Wei. Dual-level enhanced nonradiative carrier recombination in wide-gap semiconductors: the case of oxygen vacancy in SiO2. Journal of the American Chemical Society, Accepted (2023).
5. C. Qiu, Hui-Xiong Deng, S. Y. Geng, S. H. Wei. Origin of structure and zero-phonon-line anomalies of XV centers in diamond (X = Si, Ge, Sn, Pb). Physical Review B, 107(21): 214110-214110 (2023).
6. Y. K. Xue, P. P. Ren, J. J. Wu, Z. Y. Liu, S. Y. Wang, Y. Li, Z. R. Wang, Z. X. Sun, D. Wang, Y. C. Wen, S. Y. Xia, L. N. Zhang, J. F. Zhang, Z. G. Ji, J. W. Luo, Hui-Xiong Deng, R. S. Wang, L. F. Yang, R. Huang. On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects. IEEE Transactions on Electron Devices (2023).
7. X. F. Cai, S. H. Wei, P. Deak, C. Franchini, S. S. Li, Hui-Xiong Deng. Band-gap trend of corundum oxides α-M2O3 (M = Co, Rh, Ir): An ab initio study. Physical Review B, 108(7): 75137-75137 (2023).
8. Y. Zhao, F. Ma, Z. H. Qu, S. Q. Yu, T. Shen, Hui-Xiong Deng, X. B. Chu, X. X. Peng, Y. B. Yuan, X. W. Zhang, J. B. You. Inactive (PbI)RbCl stabilizes perovskite films for efficient solar cells. Science, 377(6605): 531-534 (2022).
9. X. L. Wang, C. Zhang, H. L. Wang, Y. Yuan, Z. X. Shang, B. Tan, T. Liu, D. H. Wei, Hui-Xiong Deng, J. H. Zhao. Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption. Nano Letters, 22(22): 9190-9197 (2022).
10. X. G. Wang, T. Xiong, K. Zhao, Z. Q. Zhou, K. Y. Xin, Hui-Xiong Deng, J. Kang, J. H. Yang, Y. Y. Liu, Z. M. Wei. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. Advanced Materials, 34(2): 2107206 (2022).
11. T. Y. Wang, K. Zhao, P. Wang, W. F. Shen, H. K. Gao, Z. S. Qin, Y. S. Wang, C. L. Li, Hui-Xiong Deng, C. G. Hu, L. Jiang, H. L. Dong, Z. M. Wei, L. Q. Li, W. P. Hu. Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors. Advanced Materials, 34(22): 2105665 (2022).
12. T. Shen, C. Zhang, C. Qiu, Hui-Xiong Deng. Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate. Applied Physics Letters, 120(17) (2022).
13. T. Shen, K. K. Yang, B. Y. Dou, S. H. Wei, Y. Y. Liu, Hui-Xiong Deng. Clarification of the relative magnitude of exciton binding energies in ZnO and SnO. Applied Physics Letters, 120(4) (2022).
14. X. F. Cai, J. W. Luo, S. S. Li, S. H. Wei, Hui-Xiong Deng. Overcoming the doping limit in semiconductors via illumination. Physical Review B, 106(21): 214102-214102 (2022).
15. C. Qiu, R. Y. Cao, F. Wang, Hui-Xiong Deng. Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic. Applied Physics Letters, 118(8) (2021).
16. K. Jiang, X. J. Sun, Z. M. Shi, H. Zang, J. W. Ben, Hui-Xiong Deng, D. B. Li. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light-Science & Applications, 10(1): 69-69 (2021).
17. D. Guo, C. Qiu, K. K. Yang, Hui-Xiong Deng. Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors. Physical Review Applied, 15(6): 64025-64025 (2021).
18. X. F. Cai, Y. Yang, Hui-Xiong Deng, S. H. Wei. Origin of hydrogen passivation in 4H-SiC. Physical Review Materials, 5(6): 64604-64604 (2021).
19. X. F. Cai, Hui-Xiong Deng, S. H. Wei. Carrier-stabilized hexagonal Ge. Physical Review B, 103(24): 245202-245202 (2021).
20. J. Xiao, K. K. Yang, D. Guo, T. Shen, Hui-Xiong Deng, S. S. Li, J. W. Luo, S. H. Wei. Realistic dimension-independent approach for charged-defect calculations in semiconductors. Physical Review B, 101(16): 165306-165306 (2020).
21. W. J. Liu, M. L. Liu, X. M. Liu, X. T. Wang, Hui-Xiong Deng, M. Lei, Z. M. Wei, Z. Y. Wei. Recent Advances of 2D Materials in Nonlinear Photonics and Fiber Lasers. Advanced Optical Materials, 8(8): 1901631-1901631 (2020).
22. Z. M. Chu, Y. Zhao, F. Ma, C. X. Zhang, Hui-Xiong Deng, F. Gao, Q. F. Ye, J. H. Meng, Z. G. Yin, X. W. Zhang, J. B. You. Large cation ethylammonium incorporated perovskite for efficient and spectra stable blue light-emitting diodes. Nature Communications, 11(1): 4165-4165 (2020).
23. H. Yang, L. F. Pan, X. T. Wang, Hui-Xiong Deng, M. Z. Zhong, Z. Q. Zhou, Z. Lou, G. Z. Shen, Z. M. Wei. Mixed-valence-driven quasi-1D SnIISnIVS3 with highly polarization-sensitive UV-vis-NIR photoresponse. Advanced Functional Materials, 29(38): 1904416-1904416 (2019).
24. J. Z. Wang, S. P. Senanayak, J. Liu, Y. Y. Hu, Y. J. Shi, Z. L. Li, C. X. Zhang, B. Y. Yang, L. F. Jiang, D. W. Di, A. V. Ievlev, O. S. Ovchinnikova, T. Ding, Hui-Xiong Deng, L. M. Tang, Y. L. Guo, J. P. Wang, K. Xiao, D. Venkateshvaran, L. Jiang, D. B. Zhu, H. N. Sirringhaus. Investigation of electrode electrochemical reactions in CHNHPbBr perovskite single-crystal field-effect transistors. Advanced Materials, 31(35): 1902618-1902618 (2019).
25. Z. S. Qin, H. K. Gao, J. Y. Liu, K. Zhou, J. Li, Y. Y. Dang, L. Huang, Hui-Xiong Deng, X. T. Zhang, H. L. Dong, W. P. Hu. High-efficiency single-component organic light-emitting transistors. Advanced Materials, 31(37): 1903175-1903175 (2019).
26. R. Y. Cao, Hui-Xiong Deng, J. W. Luo. Design principles of p-Type transparent conductive materials. ACS Applied Materials & Interfaces, 11(28): 24837-24849 (2019).
27. M. Z. Zhong, Q. L. Xia, L. F. Pan, Y. Q. Liu, Y. B. Chen, Hui-Xiong Deng, J. B. Li, Z. M. Wei. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Advanced Functional Materials, 28(43): 1802581-1802581 (2018).
28. L. D. Yuan, Hui-Xiong Deng, S. S. Li, S. H. Wei, J. W. Luo. Unified theory of direct or indirect band-gap nature of conventional semiconductors. Physical Review B, 98(24): 245203-245203 (2018).
29. L. P. Tang, L. M. Tang, H. Geng, Y. P. Yi, Z. M. Wei, K. Q. Chen, Hui-Xiong Deng. Tuning transport performance in two-dimensional metal-organic framework semiconductors: Role of the metal band. Applied Physics Letters, 112(1) (2018).
30. Hui-Xiong Deng, S. H. Wei. Comment on "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors". Physical Review Letters, 120(3): 39601-39601 (2018).
31. L. Wang, D. B. Li, K. H. Li, C. Chen, Hui-Xiong Deng, L. Gao, Y. Zhao, F. Jiang, L. Y. Li, F. Huang, Y. S. He, H. S. Song, G. D. Niu, J. Tang. Stable 6%-efficient Sb2Se3 solar cells with a ZnO buffer layer. Nature Energy, 2(4): 17046 (2017).
32. Y. Y. Liu, P. Stradins, Hui-Xiong Deng, J. W. Luo, S. H. Wei. Suppress carrier recombination by introducing defects: The case of Si solar cell. Applied Physics Letters, 108(2) (2016).
33. Hui-Xiong Deng, J. W. Luo, S. S. Li, S. H. Wei. Origin of the distinct diffusion behaviors of Cu and Ag in covalent and ionic semiconductors. Physical Review Letters, 117(16): 165901-165901 (2016).
34. Hui-Xiong Deng, J. W. Luo, S. H. Wei. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces. Physical Review B, 91(7): 75315-75315 (2015).
35. J. Ma, Hui-Xiong Deng, J. W. Luo, S. H. Wei. Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys. Physical Review B, 90(11): 115201-115201 (2014).
36. Hui-Xiong Deng, S. H. Wei, S. S. Li, J. B. Li, A. Walsh. Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors. Physical Review B, 87(12): 125203-125203 (2013).
37. Hui-Xiong Deng, S. S. Li, J. B. Li, S. H. Wei. Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures. Physical Review B, 85(19): 195328-195328 (2012).
38. Hui-Xiong Deng, J. B. Li, S. S. Li, J. B. Xia, A. Walsh, S. H. Wei. Origin of antiferromagnetism in CoO: A density functional theory study. Applied Physics Letters, 96(16) (2010).
39. Hui-Xiong Deng, J. B. Li, S. S. Li, H. W. Peng, J. B. Xia, L. W. Wang, S. H. Wei. Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs. Physical Review B, 82(19): 193204-193204 (2010).
40. Hui-Xiong Deng, X. W. Jiang, J. W. Luo, S. S. Li, J. B. Xia, L. W. Wang. Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 103(12) (2008).