陈平，博士，研究员，博士生导师，中国科学院大学岗位教授。
2003年毕业于中国科学技术大学物理系，获凝聚态物理学士学位；2008年毕业于中国科学院半导体研究所，获微电子学与固体电子学博士学位，并留所工作至今，历任助理研究员、副研究员和研究员，其中2017-2019年在美国佐治亚理工学院访问工作。
长期从事半导体光电子材料、器件和模块研究，研制出一系列不同波长、不同结构的半导体激光器：实现了大功率蓝紫光激光器的脉冲激射，峰值功率分别达到8-20W；实现了紫外垂直腔面发射激光器（VCSELs）的室温光泵激射，激射波长370nm；基于氮化铝（AlN）材料的负电子亲和势特性，研制出AlN冷阴极电子源和微纳真空电子器件；研制出高功率窄脉冲激光发射阵列，脉冲峰值功率达到一千瓦。
在Applied Physics Letters、Journal of Applied Physics等国内外期刊发表学术论文100余篇，Google Scholar总引用2600余次，H指数为25。已授权中国发明专利10余项。目前担任Journal of Semiconductors /《半导体学报》青年编委，美国光学学会（Optica/OSA）会员，中国电子学会会员。
主要研究领域：
1. 氮化物材料外延生长与激光器研制
2. 高功率窄脉冲激光模块
3. 微纳真空电子器件
4. 片上光电集成
联系方式：
电子邮箱：pchen@semi.ac.cn；电话：010-82304235
在研/完成主要项目：
1.国家自然科学基金联合基金重点项目：强辐射场下常温工作的AlN基大灵敏区辐射探测器的应力调控和噪声抑制（2022-2025，主持）
2.中国科学院战略性先导科技专项（B类）课题：激光模式耦合与动态光场基础物理（2020-2024，课题负责人）
3.中国科学院国际合作局全球共性挑战重点项目：真空纳米三极管：新一代集成电路元器件方案（2022-2024，主持）
4.国家自然科学基金面上项目：GaN紫外垂直腔面发射激光器量子效率调控和器件研制（2021-2024，主持）
5.中国科学院半导体研究所青年人才推进计划项目：低位错AlN材料外延生长与紫外激光器研制（2021-2023，主持）
6.国家自然科学基金面上项目：低铟组分InGaN量子阱中载流子泄漏的抑制及GaN基近紫外激光器研究（2017-2020，主持）
7.国家自然科学基金面上项目：负电子亲和势AlN冷阴极材料的平面电子发射特性研究（2014-2017，主持）
8.中国科学院青年创新促进会会员：（2014-2017，主持）
代表性论文或著作：
1.Q. Y. Bian, P. Chen*, F. Liang, R. Zhang, D. G. Zhao, and C. L. Xue, Control mechanism of the back insulated-gate in vacuum nano-electronics, J. Vac. Sci. Technol. B 42, 063211 (2024)
2.P. Chen*, Y. J. Park, Y.-S. Liu, T. Detchprohm, P. D. Yoder, S.-C. Shen, and R. D. Dupuis, Epitaxial growth and optically pumped stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures, Journal of Electronic Materials 49, 2326-2331 (2020)
3.P. Chen*, D. G. Zhao, D. S. Jiang, J. Yang, J. J. Zhu, Z. S. Liu, W. Liu, F. Liang, S. T. Liu, Y. Xing, and L. Q. Zhang, Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electro- luminescence spectra shift, Chin. Phys. B 29(3), 034206(2020)
4.P. Chen*, Y. J. Park, Y.-S. Liu, T. Detchprohm, P. D. Yoder, S.-C. Shen, and R. D. Dupuis, Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures，Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 1094005 (1 March 2019)
5.P. Chen*, D. G. Zhao*, D. S. Jiang, H. Long, M. Li, J. Yang, J. J. Zhu, Z. S. Liu, X. J. Li, W. Liu, X. Li, F. Liang, J. P. Liu, B. S. Zhang, and H. Yang, Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes, AIP Advances 7, 035103 (2017)
6.F. Liang, P. Chen*, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, J. Yang, W. Liu, X. Li, S. T. Liu, H. Yang, L. Q. Zhang, J. P. Liu, Y. T. Zhang, and G. T. Du, Effects of Si doping on field emission characteristics of AlN films grown on n type 6H SiC by MOCVD, Materials Technology 32(6), 349-354 (2017)
7.F. Liang, P. Chen*, D. G. Zhao, D. S. Jiang, Z. J. Zhao, Z. S. Liu, J. J. Zhu, J. Yang, L. C. Le, W. Liu, X. G. He, X. J. Li, X. Li, S. T. Liu, H. Yang, J. P. Liu, L. Q. Zhang, Y. T. Zhang, and G. T. Du, XPS study of impurities in Si-doped AlN film, Surface and Interface Analysis 48, 1305 (2016)
8.F. Liang, P. Chen*, D. G. Zhao, D. S. Jiang, Z. J. Zhao, Z. S. Liu, J. J. Zhu, J. Yang, W. Liu, X. G. He, X. J. Li, X. Li, S. T. Liu, H. Yang, L. Q. Zhang, J. P. Liu, Y. T. Zhang, and G. T. Du, Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC, Chin. Phys. B 25, 057703 (2016)
9.P. Chen, D. G. Zhao*, D. S. Jiang, J. J. Zhu, Z. S. Liu, J. Yang, X. Li, L. C. Le, X. G. He, W. Liu, X. J. Li, F. Liang, B. S. Zhang, H. Yang, Y. T. Zhang, and G. T. Du, The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes, AIP Advances 6, 035124 (2016)
10.F. Liang, P. Chen*, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, J. Yang, W. Liu, X. G. He, X. J. Li, X. Li, S. T. Liu, H. Yang, L. Q. Zhang, J. P. Liu, Y. T. Zhang, and G. T. Du, Large filed emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC, Chem. Phys. Lett. 651, 76 (2016)
11.F. Liang, P. Chen*, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, J. Yang, L. C. Le, W. Liu, X. G. He, X. J. Li, X. Li, L. Q. Zhang, J. P. Liu, and H. Yang, Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode, J. Vac. Sci. Technol. B 34, 012201 (2016)
12.P. Chen, D. G. Zhao*, D. S. Jiang, J. J. Zhu, Z. S. Liu, L. C. Le, J. Yang, X. Li, L. Q. Zhang, J. P. Liu, S. M. Zhang, and H. Yang, The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes, Phys. Status Solidi A 212 (12), 2936-2943 (2015)
13.M. Shi#, P. Chen#, D. G. Zhao*, D. S. Jiang, J. Zheng, B. W. Cheng, J. J. Zhu, Z. S. Liu, W. Liu, X. Li, D. M. Zhao, Q. M. Wang, J. P. Liu, S. M. Zhang, and H. Yang, Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, Chin. Phys. B 24, 057901 (2015)
14.P. Chen, D. G. Zhao, M. X. Feng, D. S. Jiang, Z. S. Liu, L. Q. Zhang, D. Y. Li, J. P. Liu, H. Wang, J. J. Zhu, S. M. Zhang, B. S. Zhang, and H. Yang, High Power InGaN-based Blue-Violet Laser Diode Array with Broad-area Stripe, Chin. Phys. Lett. 30, 104205 (2013)
15.P. Chen, D. G. Zhao, Y. H. Zuo, D. S. Jiang, Z. S. Liu, and Q. M. Wang, Quadratic electro-optic effect in GaN-based materials, Appl. Phys. Lett. 100, 161901 (2012)
16.P. Chen, M. X. Feng, D. S. Jiang, D. G. Zhao, Z. S. Liu, L. Li, L. L. Wu, L. C. Le, J. J. Zhu, H. Wang, S. M. Zhang, and H. Yang, Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer, J. Appl. Phys. 112, 113105 (2012)
17.P. Chen, Y. H. Zuo, X. G. Tu, D. J. Cai, S. P. Li, J. Y. Kang, Y. D. Yu, J. Z. Yu, and Q. M. Wang, Interaction between the intrinsic second- and third-order optical fields in Al0.53Ga0.47N/GaN heterostructure, Appl. Phys. Lett. 92, 161112 (2008)
18.P. Chen, S. P. Li, X. G. Tu, Y. H. Zuo, L. Zhao, S. W. Chen, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. D. Yu, J. Z. Yu, and Q. M. Wang, Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures, Proceedings of SPIE 6984, 69841G (2008)
19.P. Chen, X. G. Tu, S. P. Li, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. H. Zuo. L. Zhao, S. W. Chen, Y. D. Yu, J. Z. Yu, and Q. M. Wang, Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization- maintaining fiber Mach-Zehnder interferometer, Appl. Phys. Lett. 91, 031103 (2007)