刘岳阳，男，博士，研究员，博士生导师。
2012年和2017年在湖南大学获得学士和博士学位，2017年7月获得“博士后创新人才支持计划”资助，进入中国科学院半导体研究所从事博士后研究，2019年2月至2020年4月在美国劳伦斯伯克利国家实验室进行访学研究，2020年11月进入中国科学院半导体研究所半导体超晶格国家重点实验室工作，2023年3月入选中科院高层次人才计划。
主要科研方向
（1）半导体器件可靠性物理
（2）器件可靠性多尺度模拟
（3）器件界面和缺陷研究
主要学术成就：
长期从事半导体器件可靠性物理研究：针对Si基传统晶体管、先进环栅晶体管（GAAFET）以及新兴二维材料半导体器件等，建立了一套基于原子级器件模型构建、第一性原理计算以及电荷转移理论的精确模拟框架，揭示了缺陷电荷俘获、热载流子退化、栅介质经时击穿等器件可靠性问题的微观物理机制，并从理论上提出了改进方案。以第一作者或通讯作者身份发表论文20余篇，包括微电子器件领域国际顶会IEDM 2篇，PRB、PR Applied 各2篇，Advanced Materials 2篇，Applied Physics Letters 5 篇等。
在研/完成项目：
（1）半导体氧化层多界面缺陷中心电荷俘获机理研究,负责人, 2021-2023
（2）FinFET和GAAFET热载流子可靠性的原子级动力学理论研究,负责人, 2022-2025
（3）工业模拟芯片可靠性模型及仿真方法研究, 参与,2022-2025
（4）CMOS器件界面缺陷与偏压温度不稳定性理论研究，负责人，2018-2019。
联系方式：
E-mail: yueyangliu@semi.ac.cn
代表性论文或著作：
[1] Zirui Wang, Haoran Lu, Zixuan Sun, Cong Shen, Baokang Peng, Wen-Feng Li, Yongkang Xue, Da Wang, Zhigang Ji, Lining Zhang, Yue-Yang Liu*, Xiangwei Jiang, Runsheng Wang+, Ru Huang, “New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS”, 2023 IEEE International Electron Devices Meeting (IEDM), Accepted.
[2] Wanying Li, Yimeng Guo, Zhaoping Luo, Shuhao Wu, Bo Han, Weijin Hu, Lu You, Kenji Watanabe, Takashi Taniguchi, Thomas Alava, Jiezhi Chen, Peng Gao, Xiuyan Li, Zhongming Wei, Lin-Wang Wang, Yue-Yang Liu*, Chengxin Zhao*, Xuepeng Zhan*, Zheng Vitto Han*, and Hanwen Wang*, “A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory”, Adv. Mater. 35, 2208266 (2023).
[3] Xingang Wang, Tao Xiong, Kai Zhao, Ziqi Zhou, Kaiyao Xin, Hui-Xiong Deng, Jun Kang, Juehan Yang, Yue-Yang Liu*, and Zhongming Wei*, “Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS”, Adv. Mater. 34, 2107206 (2022).
[4] Tao Xiong, Juehan Yang, Hui-Xiong Deng, Zhongming Wei, and Yue-Yang Liu*, “The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors’ reliability by high-k dielectric and yttrium-doping: From the view of charge trapping”, J. Appl. Phys. 132, 174506 (2022).
[5] Hao Liu, Pan Wang, Yixin Zong, Hongyu Wen*, Yue-Yang Liu*, and Jianbai Xia, “Giant tunnel magnetoresistance in two-dimensional van der Waals magnetic tunnel junctions: Ag/CrI3/MoSi2N4/CrI3/Ag”, Phys. Rev. B 106, 104429 (2022).
[6] Haodong Hu, Ze Feng, Yibo Wang, Yan Liu, Hong Dong*, Yue-Yang Liu*, Yue Hao, and Genquan Han*, “The role of surface pretreatment by low temperature O2 gas annealing for β-Ga2O3 Schottky barrier diodes”, Appl. Phys. Lett. 120, 073501 (2022).
[7] Xiaolei Ma#, Yue-Yang Liu#, Lang Zeng, Jiezhi Chen,* Runsheng Wang,* Lin-Wang Wang, Yanqing Wu, and Xiangwei Jiang*, “Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory”, ACS Appl. Mater. Interfaces 14, 2185-2193 (2022).
[8] Yue-Yang Liu, Zhongming Wei, Sheng Meng*, Runsheng Wang, Xiangwei Jiang*, Ru Huang, Shu-Shen Li, and Lin-Wang Wang*, “Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory”, Phys. Rev. B 104, 115310 (2021).
[9] Yue-Yang Liu, Feilong Liu, Runsheng Wang*, Jun-Wei Luo*, Xiangwei Jiang*, Ru Huang, Shu-Shen Li and Lin-Wang Wang*, “Characterizing the charge trapping across crystalline and amorphous Si/SiO2/HfO2 stacks from first principle calculations”, Phys. Rev. Appl. 12, 064012 (2019).
[10] Yue-Yang Liu, Fan Zheng, Xiangwei Jiang*, Jun-Wei Luo, Shu-Shen Li, and Lin-Wang Wang*, “Ab initio investigation of charge trapping across the crystalline-Si - amorphous-SiO2 interface”, Phys. Rev. Appl. 11, 044058 (2019).
[11] Yue-Yang Liu, and Xiangwei Jiang*, “Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theory”, in 2018 IEEE International Electron Devices Meeting (IEDM), pp. 922–925.
[12] Yue-Yang Liu, Xiangwei Jiang*, Liwei Wang, Yunfei En, and Runsheng Wang*, “Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack”, in 2019 IEEE International Reliability Physics Symposium (IRPS), pp. 1-4.
[13] Yue-Yang Liu, Yu-Jia Zeng, Pin-Zhen Jia, Xuan-Hao Cao, Xiangwei Jiang*, Ke-Qiu Chen*, “An efficient mechanism for enhancing the thermoelectricity of nanoribbons by blocking phonon transport in 2D materials”, J. Phys.: Condens. Matter 30, 275701 (2018).
[14] Yue-Yang Liu, Bo-Lin Li, Shi-Zhang Chen, Xiangwei Jiang, Ke-Qiu Chen*, “Effect of room temperature lattice vibration on the electron transport in graphene nanoribbons”, Appl. Phys. Lett. 111, 133107 (2017).
[15] Yue-Yang Liu, Bo-Lin Li, Wu-Xing Zhou, Ke-Qiu Chen*, "Triggering piezoelectricity directly by heat to produce alternating electric voltage", Appl. Phys. Lett. 109, 113107 (2016).
[16] Yue-Yang Liu, Wu-Xing Zhou, Li-Ming Tang, and Ke-Qiu Chen*, "An important mechanism for thermal rectification in graded nanowires", Appl. Phys. Lett. 105, 203111 (2014).
[17] Yue-Yang Liu, Wu-Xing Zhou, Li-Ming Tang, Ke-Qiu Chen*, "Core-shell nanowire serves as heat cable", Appl. Phys. Lett. 103, 263118 (2013).