徐驰，男，博士，研究员，博士生导师。

中国科学院半导体研究所研究员、博士生导师、“国家自然科学基金优秀青年科学基金项目（海外）”获得者，主要研究方向为利用高活性气体源，通过化学气相沉积方式外延生长硅-锗-锡类材料，制备一系列红外光电子器件，并研究相关的半导体物理问题。

2008年于北京大学物理学院获学士学位，2013年在美国亚利桑那州立大学获博士学位。历任亚利桑那州立大学博士后、助理研究科学家、助理研究教授，2021年至今为中国科学院半导体研究所研究员。同年获得国家自然科学基金优秀青年科学基金项目（海外）。

主要研究领域方向：

1、锗锡半导体材料在硅片上的外延生长及其机理研究；

2、硅基红外半导体器件的研制；

3、硅-锗-锡类材料的能带结构、掺杂效应、晶格常数与组分关系研究。

联系方式：

E-mail：chixu@semi.ac.cn

在研/完成项目：

一、国家重点研发计划（青年项目）：支撑高性能锗基逻辑器件的高效原位掺杂材料研究，任务一负责人，2024年12月-2027年11月；

二、国家自然科学基金面上项目：硅基锗锡合金薄膜材料异质外延与分凝相变机理研究，2025年1月-2028年12月；

三、国家自然科学基金面上项目：锗锡合金材料N型原位掺杂技术与机理研究，2023年1月-2026年12月；

四、国家重点研发计划：面向高性能计算应用的超高带宽光收发芯片及模块，课题负责人，2022年7月-2025年6月。

代表性论文或著作：

[1]. C. Xie, Y. Li, Z. Wu, S. Wu, Y. Wang, G. Lin, C. Li, H. Cong, C. Xu*, C. Xue*, “High-quality Ge_1-xSn_x (x = 0-0.11) realized by UHV-CVD using Ge₂H₆ and SnCl₄: Materials growth, structural/optical properties, and prototype IR photodetectors,” APL Materials, 12 (7), 071122, 2024.

[2]. C. Xu, Z. Wu, Y. Li, X. Wang, X. Chang, C. Xie, C. Wang, C. Chen, Y. Wang, H. Cong, C. Xue*, “Elucidating a proper framework for the determination of threading dislocation densities in semiconductor films: A comprehensive study based on Ge/Si(001),” Semiconductor Science and Technology, 39 (12), 125006, 2024.

[3]. C. Xie, Y. Li, C. Xu*, Y. Wang, H. Cong, C. Xue, “Epitaxial growth of high-quality Ge layers on Si with Ge₂H₆ under UHV-CVD conditions,” Semiconductor Science and Technology, 39 (1), 015008, 2024.

[4]. F. Wan, C. Xu*, X. Wang, G. Xu, B. Cheng, C. Xue, “Study of strain evolution mechanism in Ge_1-xSn_x materials grown by low temperature molecular beam epitaxy,” Journal of Crystal Growth, 577, 126399, 2022.

[5]. M. A. Mircovich, C. Xu, D. A. Ringwala, C. D. Poweleit, J. Menéndez, J. Kouvetakis*, “Extended compositional range for the synthesis of SWIR and LWIR Ge_1-ySn_y alloys and device structures via CVD of SnH₄ and Ge₃H₈,” ACS Applied Electronic Materials, 3, 3451, 2021.

[6]. C. Xu, T. Hu, D. A. Ringwala, J. Menéndez, J. Kouvetakis*, “Gas source molecular epitaxy of Ge_1-ySn_y materials and devices using high order Ge₄H₁₀ and Ge₅H₁₂ hydrides,” Journal of Vacuum Science & Technology A, 39 (6), 063411, 2021.

[7]. C. Xu*, D. A. Ringwala, D. Wang, L. Liu, C. D. Poweleit, S. L. Y. Chang, H. L. Zhuang, J. Menéndez, J. Kouvetakis, “Synthesis and fundamental studies of Si-compatible (Si) GeSn and GeSn mid-IR systems with ultrahigh Sn contents,” Chemistry of Materials, 31, 9831-9842, 2019.

[8]. C. Xu*, P. M. Wallace, D. A. Ringwala, S. L. Y. Chang, C. D. Poweleit, J. Kouvetakis, J. Menéndez, “Mid-infrared (3-8 μm) Ge_1-ySn_y alloys (0.15<y<0.30): Synthesis, structural, and optical properties,” Applied Physics Letters, 114, 212104, 2019.

[9]. C. Xu*, J. Kouvetakis, J. Menéndez, “Doping dependence of the optical dielectric function in n-type germanium,” Journal of Applied Physics, 125 (8), 085704, 2019.

[10]. C. Xu*, P. M. Wallace, D. A. Ringwala, J. Menéndez, J. Kouvetakis, “Fabrication of Ge:Ga hyperdoped materials and devices using CMOS-compatible Ga and Ge hydride chemistries,” ACS Applied Materials & Interfaces, 10 (43), 37198-37206, 2018.

[11]. C. Xu, C. L. Senaratne, R. J. Culbertson, J. Kouvetakis, J. Menéndez*, “Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge_1-ySn_y and Ge_1-xSi_x cases,” Journal of Applied Physics, 122 (12), 125702, 2017.

[12]. C. Xu, N. S. Fernando, S. Zollner, J. Kouvetakis, J. Menéndez*, “Observation of phase-filling singularities in the optical dielectric function of highly doped n-type Ge,” Physical Review Letters, 118 (26), 267402, 2017.

[13]. C. Xu*, C. L. Senaratne, P. Sims, J. Kouvetakis, J. Menéndez, “Ultralow resistivity Ge: Sb heterostructures on Si using hydride epitaxy of deuterated stibine and trigermane,” ACS Applied Materials & Interfaces, 8 (36), 23810-23819, 2016.

[14]. C. Xu, J. D. Gallagher, C. L. Senaratne, J. Menéndez, J. Kouvetakis*, “Optical properties of Ge-rich Ge_1-xSi_x alloys: Compositional dependence of the lowest direct and indirect gaps,” Physical Review B, 93, 125206, 2016.

[15]. C. Xu, C. L. Senaratne, J. Kouvetakis, J. Menéndez*, “Experimental doping dependence of the lattice parameter in n-type Ge: Identifying the correct theoretical framework by comparison with Si,” Physical Review B, 93, 041201(R), 2016.

[16]. C. Xu, J. D. Gallagher, P. M. Wallace, C. L. Senaratne, P. Sims, J. Menéndez*, J. Kouvetakis, “In situ low temperature As-doping of Ge films using As (SiH₃)₃ and As (GeH₃)₃: Fundamental properties and device prototypes,” Semiconductor Science and Technology, 30, 105028, 2015.

[17]. C. Xu, C. L. Senaratne, J. Kouvetakis*, J. Menéndez, “Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys,” Solid-State Electronics, 110, 76-82, 2015.

[18]. C. Xu, J. D. Gallagher, P. Sims, J. Menéndez, J. Kouvetakis*, “Non-conventional routes to SiGe:P/Si (100) materials and devices based on-SiH₃ and-GeH₃ derivatives of phosphorus: Synthesis, electrical performance and optical behavior,” Semiconductor Science and Technology, 30, 045007, 2015.

[19]. C. Xu, C. L. Senaratne, J. Kouvetakis, J. Menéndez*, “Frustrated incomplete donor ionization in ultra-low resistivity germanium films,” Applied Physics Letters, 105, 232103, 2014.

[20]. C. Xu, R. T. Beeler, L. Jiang, J. D. Gallagher, R. Favaro, J. Menéndez*, J. Kouvetakis, “Synthesis and optical properties of Sn-rich Ge_1-x-ySi_xSn_y materials and devices,” Thin Solid Films, 557, 177, 2014.

[21]. C. Xu, R. T. Beeler, L. Jiang, G. Grzybowski, A. V. G. Chizmeshya, J. Menéndez*, J. Kouvetakis, “New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case,” Semiconductor Science and Technology, 28, 105001, 2013.

[22]. C. Xu, L. Jiang, J. Kouvetakis, J. Menéndez*, “Optical properties of Ge_1-x-ySi_xSn_y alloys with y>x: Direct bandgaps beyond 1550 nm,” Applied Physics Letters, 103 (7), 072111, 2013.

[23]. C. Xu, R. T. Beeler, G. Grzybowski, A. V. G. Chizmeshya, D. J. Smith, J. Menéndez, J. Kouvetakis*, “Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn,” Journal of the American Chemical Society, 134 (51), 20756-20767, 2012.