张 菁

张菁,女,博士,研究员,博士生导师

19884月出生于江苏省扬州市。2016博士毕业于中国科学院物理研究所,随后前往新加坡南洋理工大学(2016-2018年)及瑞士洛桑联邦理工学院(2018-2020年)开展博士后研究工作。2020入职中国科学院半导体研究所长期致力于二维半导体材料与新原理器件的研究,取得了一系列原创性研究成果,共发表SCI学术论文30余篇, 包括Nat. Commun. 3, Adv. Mater. 3, ACS nano 3, JACS 2篇,Phys. Rev. Lett. 2篇等,其中有3篇入选ESI高被引论文。授权专利1项,总计引用2000余次,H因子18

取得的重要科研成果所获奖励

围绕二维半导体及其异质结的可控制备、物性调控、新原理器件开展了系统研究,主要成果包括:

1实现了厘米量级连续、高质量、单层二硫化钼薄膜的直接生长,构筑了高性能晶体管器件ACS nano 8, 6024, 2014。同时,该方法生长的单层二硫化钼薄膜在相变工程JACS 139, 30, 2017、超短沟道晶体管器件Adv. Mater. 29, 1702522, 2017、电化学催化领域表现出潜在的应用前景(Nat. Commun. 10, 1348, 2019阐明了一种氧原子辅助、普适、高质量的大尺寸二维单晶材料可控生长的方法,实现了成核与生长的精确控制,为高质量二维材料可控制备提供了新的思路JACS 137, 15632, 2015. ESI高被引

2实现了层数精准可控、界面原子级平整、高质量的二维范德华异质结的可控外延生长。基于外延的范德华半导体异质结体系,系统研究了晶体相对转角和堆垛构型相关的光、电、磁、自旋-能谷相关的新奇物性,并实现了对体系声子(Adv. Mater. 28, 1950, 2016、激子(Nat. Commun. 7, 12512, 2016、光子和能谷态(Nat. Commun. 10, 4226, 2019的有效调控,这一系列新效应和新物性的发现对设计和构筑具有新原理的光电、自旋、能谷、激子等信息器件具有重要的指导意义。

主要研究领域方向

1. 二维材料(二维半导体、二维磁体等)及其异质结构的可控生长、人工构筑以及光电特性调控。

2. 新型低维半导体材料中能谷与自旋态的量子调控及新原理信息器件,包括自旋电子器件谷电子学器件和激子晶体管等。

3. 以低温电学输运及磁场光谱为手段,研究低维半导体异质结中相关多体电子态、超晶格激子效应等新奇物理现象。

联系方式

邮箱jzhang@semi.ac.cn

在研/完成项目

1.中科院半导体所青年科技人才推进计划 二维原子晶体自旋和能谷态量子器件研究2021-2024在研,主持

2.中科院半导体所卓越青年学者启动经费,2020-2023在研,主持

代表性论文或著作#第一作者,*通讯作者)

1. Jing Zhang, Luojun Du, Shun Feng, Run-Wu Zhang, Bingchen Cao, Chenji Zou, Yu Chen, Mengzhou Liao, Baile Zhang, Shengyuan A. Yang, Guangyu Zhang* and Ting Yu* Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route, Nat. Commun. 10, 4226, 2019.

2. Jing Zhang, Jinhuan Wang, Peng Chen, Yue Sun, Shuang Wu, Zhiyan Jia, Xiaobo Lu, Hua Yu, Wei Chen, Jianqi Zhu, Guibai Xie, Rong Yang, Dongxia Shi*, Xiulai Xu, Jianyong Xiang, Kaihui Liu, and Guangyu Zhang*, Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures, Adv. Mater. 28, 1950, 2016.

3. Jing Zhang, Hua Yu, Wei Chen, Xuezeng Tian, Donghua Liu, Meng Cheng, Guibai Xie, Wei Yang, Rong Yang, Xuedong Bai, Dongxia Shi, and Guangyu Zhang*, Scalable Growth of High-Quality Polycrystalline MoS2-Monolayers on SiO2 with Tunable Grain Sizes, ACS nano 8, 6024, 2014.

4. Wei Chen#, Jing Zhao#, Jing Zhang#, Hua Yu, Lin Gu, Zhenzhong Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Oxygen-assisted Growth of Large-area MoS2 domains on Sapphire. J. Am. Chem. Soc. 137, 15632, 2015.

5. Hailong Chen#, Xiewen Wen#, Jing Zhang#, Yongji Gong, Jun Lou, Pulickel M. Ajayan, Wei Zhang*, Guangyu Zhang*, and Junrong Zhen*, Hot Interlayer Excitons in Atomically thin MoS2-WS2 Heterostructures, Nat. Commun. 7, 12512, 2016.

6. Miao Zhang*, Martina Lihter, Tzu-Heng Chen, Michal Macha, Archith Rayabharam, Karla Banjac, Yanfei Zhao, Zhenyu Wang, Jing Zhang, Jean Comtet, Narayana R Aluru, Magalí Lingenfelder, Andras Kis, Aleksandra Radenovic*, ACS nano 15, 7168, 2021.

7. Jianqi Zhu#, Zhi-Chang Wang#, Huijia Dai#, Qinqin Wang, Rong Yang, HuaYu, Mengzhou Liao, Jing Zhang, Wei Chen, Luojun Du, Dongxia Shi, Wenlong Wang, Lixin Zhang*, Ying Jiang*, and Guangyu Zhang*, Boundary activated hydrogen evolution reaction on monolayer MoS2. Nat. Commun. 10, 1348, 2019.

8. Yu Chen, Bo Peng, Chunxiao Cong, Jingzhi Shang, Lishu Wu, Weihuang Yang, Jiadong Zhou, Peng Yu, Hongbo Zhang, Yanlong Wang, Chenji Zou, Jing Zhang, Sheng Liu, Qihua Xiong, Hezhu Shao, Zheng Liu, Hao Zhang*, Wei Huang*, Ting Yu*, In-Plane Anisotropic Thermal Conductivity of Few-Layered Transition Metal Dichalcogenide Td-WTe2, Adv. Mater. 31, 1804979, 2019.

9. Shuang Wu, Bing Liu, Cheng Shen, Si Li, Xiaochun Huang, Xiaobo Lu, Peng Chen, Guole Wang, Duoming Wang, Mengzhou Liao, Jing Zhang, Rong Yang, Dongxia Shi, Yugui Yao, and Guangyu Zhang*, Magnetotransport properties of graphene nanoribbons with zigzag edges, Phys. Rev. Lett., 120, 216601, 2018.

10. Li Xie, Mengzhou Liao, Shuopei Wang, Hua Yu, Luojun Du, Jian Tang, Jing Zhao, Jing Zhang, Peng Chen, Xiaobo Lu, Guole Wang, Guibai Xie, Rong Yang, Dongxia Shi, Guangyu Zhang*, Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors. Adv. Mater. 29, 1702522, 2017.

11. Jianqi Zhu, Zhichang Wang, Hua Yu, Na Li, Jing Zhang, JianLing Meng, Mengzhou Liao, Jing Zhao, Xiaobo Lu, Luojun Du, Rong Yang, Dongxia Shi, Ying Jiang*, Guangyu Zhang*, Argon Plasma Induced Phase Transition in Monolayer MoS2. J. Am. Chem. Soc. 139, 30, 2017.

12. Duoming Wang, Guorui Chen, Chaokai Li, Meng Cheng, Wei Yang, Shuang Wu, Guibai Xie, Jing Zhang, Jing Zhao, Xiaobo Lu, Peng Chen, Guole Wang, Jianling Meng, Jian Tang, Rong Yang, Congli He, Donghua Liu, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Ji Feng, Yuanbo Zhang, and Guangyu Zhang*, Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. Phys. Rev. Lett. 116, 126101, 2016.